Product
0
MSCSM120AM027T6AG
  • MSCSM120AM027T6AG

MSCSM120AM027T6AG

In Production

• SiC Power MOSFET - Low RDS(on) - High temperature performance• Kelvin source for easy drive• Low stray inductance• High efficiency converter• Outstanding performance at high frequency operation• Stable temperature behavior• Direct mounting to heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM120AM027T6AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

584

RDSon (mΩ) typ

2.8

Total Gate Charge (nC)

2088

Rise Time tR ns (nanosecond)

96

Fall Time tF ns (nanosecond)

51

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Configuration: Phase Leg
  • VDSS (V): 1200
  • RDSon (mR) typ: 2.8
  • Current (A) Tc=80°C: 584
  • Silicon Type: SiC MOSFET
  • Package Type: SP6C

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • High efficiency converter

    • Outstanding performance at high frequency operation

    • Stable temperature behavior

    • Direct mounting to heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

    Subscribe to Welllinkchips !
    Your Name
    * Email
    Popular Posts
    Featured Parts More >
    Submit a request
    CONTACT US
    Company address

    WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

    Send Enquiry
    SEND e-MAIL
    Office hour from 9am to 6pm ,
    Monday through Friday, UTC/GMT +8