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MSCSM120AM027CD3AG
  • MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

In Production

• SiC Power MOSFET- Low RDS(on)- High-temperature performance• Kelvin source for easy drive• Low stray inductance• Internal thermistor for temperature monitoring (optional)• High-efficiency converter• Outstanding performance at high-frequency operation• Stable temperature behavior• Direct mounting to the heatsink (isolated package)• Low junction to case thermal resistance• RoHS Compliant

Microchip Technology MSCSM120AM027CD3AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1200

Current A (ampere)

584

RDSon (mΩ) typ

2.7

Total Gate Charge (nC)

2088

Rise Time tR ns (nanosecond)

55

Fall Time tF ns (nanosecond)

67

MaxOperatingJunctionTemp

175

PKG

D3

Features

  • Phase Leg
  • VDSS (V): 1200
  • RDSon (mΩ) typ: 2.7
  • Current (A) Tc=80C: 584
  • Silicon Type: SiC MOSFET
  • Package: D3

    • Description

    • SiC Power MOSFET

    - Low RDS(on)

    - High-temperature performance

    • Kelvin source for easy drive

    • Low stray inductance

    • Internal thermistor for temperature monitoring (optional)

    • High-efficiency converter

    • Outstanding performance at high-frequency operation

    • Stable temperature behavior

    • Direct mounting to the heatsink (isolated package)

    • Low junction to case thermal resistance

    • RoHS Compliant

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