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MSCDC600A120AG
  • MSCDC600A120AG

MSCDC600A120AG

In Production

SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switching behaviorPositive temperature coefficient on VFLow stray inductanceHigh efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCDC600A120AG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC Diode

VRRM (V)

1200

Current A (ampere)

600

VF (V)

1.5

Total Capacitive Charge

2688

Reverse Leakage Current

0.18

MaxOperatingJunctionTemp

175

PKG

SP6C

Features

  • Configuration: Phase Leg
  • VRRM (V): 1200
  • VF (V): 1.5
  • Current (A) Tc=80C: 600
  • Silicon Type: SiC Diode
  • Package: SP6C

    • Description

    • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
    • Low stray inductance
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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