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MSC100SM70JCU2
  • MSC100SM70JCU2

MSC100SM70JCU2

In Production

SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)High efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSC100SM70JCU2 Product Info

16 April 2026 0

Parameters

Configuration

Boost Chopper

Current A (ampere)

97

RDSon (mΩ) typ

15

Silicon Type

SiC MOSFET

VDSS (V)

700

Total Gate Charge (nC)

215

Rise Time tR ns (nanosecond)

35

Fall Time tF ns (nanosecond)

20

PKG

SOT-227

MaxOperatingJunctionTemp

175

Features

  • Configuration: Boost Chopper
  • VDSS (V): 700
  • RDSon (mR) typ: 15
  • Current (A) Tc=80C: 97
  • Silicon Type: SiC MOSFET
  • Package: SOT227

    • Description

    • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
    • Kelvin source for easy drive
    • Low stray inductance
    • Internal thermistor for temperature monitoring (optional)
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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