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MSC080SMB120B
  • MSC080SMB120B

MSC080SMB120B

In Production

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.MSC080SMB120B is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.The TO-247 package is renowned for its robust construction and excellent thermal conduc...

Microchip Technology MSC080SMB120B Product Info

16 April 2026 0

Parameters

Device Family

MB

Drain Source Voltage Max V (volt)

1200

Gate Drive Voltage (V)

18-15

On-State Resistance (VGS = 18V) mΩ (milliohm)

80

On-State Resistance (VGS = 15V) mΩ (milliohm)

98

Continuous Drain Current Max (Ampere)

30

Output Capacitance (pF)

41

Junction Temperature (°C)

-55 - 175

Package Type

TO-247

Features

  • Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
  • Capable of high-frequency operation allows for smaller magnetics, improved power density, and lower system cost
  • Low capacitances and gate charge (Qg) enables efficient, high-speed switching and reduces gate drive losses
  • Superior avalanche ruggedness and short-circuit withstand time ensures robust protection and reliability under fault conditions
  • HV-H3TRB proven capability ensures long-term reliability in high humidity environments
  • Enhanced compatibility with lower VGS and standard packages allow for better compatibility with standard gate drivers
  • Industrial & AEC-Q101 Qualified options available
  • RoHS compliant to meet environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.


    MSC080SMB120B is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.


    The TO-247 package is renowned for its robust construction and excellent thermal conductivity, which significantly enhances heat dissipation. These SiC MOSFETs offer superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs.

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