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MSC080SMA120B
  • MSC080SMA120B

MSC080SMA120B

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Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size. The MSC080SMA120B is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 80 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 40A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliabi...

Microchip Technology MSC080SMA120B Product Info

16 April 2026 0

Parameters

Drain Source Voltage Max V (volt)

1200

Gate Drive Voltage (V)

20-18

On-State Resistance (VGS = 20V) mΩ (milliohm)

80

Continuous Drain Current Max (Ampere)

40

Output Capacitance (pF)

91

Junction Temperature (°C)

-55 - 175

Package Type

TO-247

Features

  • Low on-resistance (RDS(on)) reduces conduction losses and enhances both efficiency and thermal performance
  • Capable of high-frequency operation, with reduced switching losses compared to IGBTs and traditional silicon MOSFETs
  • Low capacitances and gate charge (Qg) enable efficient, high-speed switching with minimal energy loss
  • Fast switching speed, aided by low internal gate resistance (effective series resistance, ESR)
  • Stable operation at high junction temperatures, with TJ(max) up to 175°C
  • Fast, low-recovery body diode, reliable under hard commutation conditions
  • Superior avalanche ruggedness and short-circuit withstand time, enhancing system-level reliability
  • RoHS compliant, meeting environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.


    The MSC080SMA120B is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 80 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 40A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.


    The TO-247 package is renowned for its robust construction and excellent thermal conductivity, which significantly enhances heat dissipation. These SiC MOSFETs offer superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs.

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