0
In Production
Reverse Voltage [max] Max |
1200 |
Forward Current (A) [max] |
50 |
Forward Current Surge Peak A (ampere) |
290 |
Forward Voltage [typ] |
1.5 |
Reverse Leakage Current [typ] µA (microampere) |
15 |
Total Capacitive Charge (Qc) V (volt) |
224 |
Dual Diode |
No |
Junction Temperature (°C) |
-55 - 175 |
Package Type |
TO-268 (D3PAK) |
Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.
This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 50A ensures robust performance in high-power applications. The reverse leakage current is minimized to 15 µA, providing excellent efficiency and reliability. mSiC diodes in a TO-268 package combine the superior efficiency and durability of SiC technology with a robust, compact design optimized for high-power applications.
The TO-268 package features excellent thermal performance and low thermal resistance, making it ideal for systems requiring efficient heat dissipation. The package’s flat, low-profile design supports high-current handling while ensuring reliable operation in challenging thermal environments, offering designers a perfect solution for space-constrained, high-reliability applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
