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MSC040SMB120D/S
  • MSC040SMB120D/S

MSC040SMB120D/S

In Production

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.MSC040SMB120D/S is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments. SiC bare die MOSFETs offers system-level customization for highly efficient and comp...

Microchip Technology MSC040SMB120D/S Product Info

16 April 2026 0

Parameters

Device Family

MB

Drain Source Voltage Max V (volt)

1200

Gate Drive Voltage (V)

18-15

On-State Resistance (VGS = 18V) mΩ (milliohm)

40

On-State Resistance (VGS = 15V) mΩ (milliohm)

49

Continuous Drain Current Max (Ampere)

54

Output Capacitance (pF)

78

Junction Temperature (°C)

-55 - 175

Package Type

Die

Features

  • Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
  • Capable of high-frequency operation allows for smaller magnetics, improved power density, and lower system cost
  • Low capacitances and gate charge (Qg) enables efficient, high-speed switching and reduces gate drive losses
  • Superior avalanche ruggedness and short-circuit withstand time ensures robust protection and reliability under fault conditions
  • HV-H3TRB proven capability ensures long-term reliability in high humidity environments
  • Enhanced compatibility with lower VGS and standard packages allow for better compatibility with standard gate drivers
  • Die offered in waffle pack for evaluation and manufacturing flexibility
  • Industrial & AEC-Q101 Qualified options available
  • RoHS compliant to meet environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.


    MSC040SMB120D/S is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.


    SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. Our mSiC solutions which span die, discretes and modules, enhance design flexibility and scalability, empowering innovation across a wide range of system architectures. 

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