Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

MSC031SMC120D/S is part of our MC Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a V_GS of 15V enabling easy design-in and reuse of existing drive circuits. The integrated gate resistor improves switching stability in multi-die packages and reduces ringing and electromagnetic interference (EMI). With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. Our mSiC solutions which span die, discretes and modules, enhance design flexibility and scalability, empowering innovation across a wide range of system architectures.