Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.

This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 30A ensures robust performance in high-power applications. The reverse leakage current is minimized to 9 µA, providing excellent efficiency and reliability. This dual diode with a common cathode configuration offers superior efficiency and reliability, ideal for high-voltage and high-frequency power conversion applications.

mSiC diodes in a TO-247 3-lead package offer exceptional performance for advanced power applications, leveraging the additional lead to enhance versatility in circuit design. The TO-247 3-lead package provides improved thermal management and current-handling capabilities. The package supports SiC diodes' ultra-fast switching and negligible reverse recovery characteristics, reducing switching losses and improving system efficiency. Its robust design ensures reliable operation in high-temperature and high-voltage environments, while the third lead allows for more precise electrical connections, enabling optimized layouts for sophisticated power systems.