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MSC027SMA330D/S
  • MSC027SMA330D/S

MSC027SMA330D/S

In Production

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size. The MSC027SMA330D/S is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 104A. With maximum ratings reaching up to 150°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance...

Microchip Technology MSC027SMA330D/S Product Info

16 April 2026 0

Parameters

Drain Source Voltage Max V (volt)

3300

Gate Drive Voltage (V)

20-18

On-State Resistance (VGS = 20V) mΩ (milliohm)

25

Continuous Drain Current Max (Ampere)

104

Output Capacitance (pF)

194

Junction Temperature (°C)

-55 - 150

Package Type

Die

Features

  • Low on-resistance (RDS(on)) reduces conduction losses and enhances both efficiency and thermal performance
  • Capable of high-frequency operation, with reduced switching losses compared to IGBTs and traditional silicon MOSFETs
  • Low capacitances and gate charge (Qg) enable efficient, high-speed switching with minimal energy loss
  • Fast switching speed, aided by low internal gate resistance (effective series resistance, ESR)
  • Stable operation at high junction temperatures, with TJ(max) up to 175°C
  • Fast, low-recovery body diode, reliable under hard commutation conditions
  • Superior avalanche ruggedness and short-circuit withstand time, enhancing system-level reliability
  • RoHS compliant, meeting environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

    The MSC027SMA330D/S is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 104A. With maximum ratings reaching up to 150°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

    The SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. The compact design of the bare die package enables even higher power density, making it ideal for high-power, high-efficiency systems.

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