0
In Production
Reverse Voltage [max] Max V (volt) |
1200 |
Forward Current (A) [max] |
22 |
Forward Current Surge Peak Max A (ampere) |
115 |
Forward Voltage [typ] V (volt) |
1.5 |
Reverse Leakage Current [typ] µA (microampere) |
6 |
Total Capacitive Charge (Qc) V (volt) |
91 |
Dual Diode |
No |
Junction Temperature (°C) |
-55 - 175 |
Package Type |
Die |
Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.
This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 20A ensures robust performance in high-power applications. The reverse leakage current is minimized to 6 µA, providing excellent efficiency and reliability. Bare die mSiC diodes offer unmatched flexibility and performance for custom power module designs and compact, high-efficiency systems.
Without a standard package, bare die SiC diodes enable direct integration onto substrates, minimizing parasitic inductance and enhancing thermal management. Bare die SiC diodes provide ultra-fast switching, negligible reverse recovery losses, and exceptional high-temperature performance, allowing engineers to optimize layouts for maximum efficiency and reliability in cutting-edge, high-power applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
