Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC017SMA120SD is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 17 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 136A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

The TO-263-7 XL package, also known as D2PAK-7L XL, features an extended lead design that enhances electrical connectivity and thermal performance. These SiC MOSFETs deliver superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs. The extended lead design of the D2PAK-7L XL package allows for improved heat dissipation and easier integration into power systems.