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MSC017SMA120J
  • MSC017SMA120J

MSC017SMA120J

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Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size. The MSC017SMA120J is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 17 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 89A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliabi...

Microchip Technology MSC017SMA120J Product Info

16 April 2026 0

Parameters

Drain Source Voltage Max V (volt)

1200

Gate Drive Voltage (V)

20-18

On-State Resistance (VGS = 20V) mΩ (milliohm)

17

On-State Resistance (VGS = 18V) mΩ (milliohm)

19

Continuous Drain Current Max (Ampere)

89

Output Capacitance (pF)

263

Junction Temperature (°C)

-55 - 175

Package Type

SOT-227

Features

  • Low on-resistance (RDS(on)) reduces conduction losses and enhances both efficiency and thermal performance
  • Capable of high-frequency operation, with reduced switching losses compared to IGBTs and traditional silicon MOSFETs
  • Low capacitances and gate charge (Qg) enable efficient, high-speed switching with minimal energy loss
  • Fast switching speed, aided by low internal gate resistance (effective series resistance, ESR)
  • Stable operation at high junction temperatures, with TJ(max) up to 175°C
  • Fast, low-recovery body diode, reliable under hard commutation conditions
  • Superior avalanche ruggedness and short-circuit withstand time, enhancing system-level reliability
  • RoHS compliant, meeting environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

    The MSC017SMA120J is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 17 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 89A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

    The SOT-227 package offers robust mechanical stability and excellent heat dissipation capabilities, making it ideal for high-power applications. The SOT-227 package's design allows for easy mounting and integration into power modules, enhancing reliability and simplifying assembly.

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