Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.

This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 10A ensures robust performance in high-power applications. The reverse leakage current is minimized to 3 µA, providing excellent efficiency and reliability. mSiC diodes in a TO-220 package deliver high efficiency and compact performance, making them an excellent choice for medium-power applications.

The TO-220 package offers a balance of thermal performance and size, featuring a reliable design that ensures efficient heat dissipation and supports high-temperature operation. The package complements the inherent benefits of SiC diodes, such as ultra-fast switching, minimal reverse recovery losses, and high breakdown voltage. Its compact form factor and ease of mounting make the TO-220 package a versatile solution for space-constrained designs, enabling engineers to achieve high efficiency and reliability in a wide range of applications.