0
Not Recommended for new designs
Capacitive Load Drive |
3,000 pF in 1.34 ms |
MOSFET Driver Type |
High Side |
Supply Voltage Max V (volt) |
9 |
Peak Sink Current A (ampere) |
1e-05 |
Peak Source Current A (ampere) |
1e-05 |
Propagation Delay tD1 ns (nanosecond) |
0 |
Propagation Delay tD2 ns (nanosecond) |
0 |
Sink Resistance Ω (ohm) |
0 |
Source Resistance Ω (ohm) |
0 |
Fall Time tF ns (nanosecond) |
5560 |
Rise Time tR ns (nanosecond) |
440000 |
# of Outputs |
1 |
Integrated MOSFETs |
External |
Peak High-Side Source Current (Ampere) |
1e-05 |
Peak Low-Side Source Current (Ampere) |
1e-05 |
Peak High-Side Sink Current (Ampere) |
1e-05 |
Supply Voltage Min V (volt) |
2.7 |
Bootstrap Supply Voltage Max V (volt) |
16 |
High-Side Rise Time (ns) |
440000 |
Low-Side Rise Time (ns) |
440000 |
High-Side Fall Time (ns) |
5500 |
Low-Side Fall Time (ns) |
5500 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Junction) Max °C (degrees Celsius) |
125 |
Output Configuration |
High-Side |
The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.
The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode.
In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.
The MIC5019 is available in an ultra-small 4-pin 1.2 x 1.2 mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.
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