0
MIC5014
  • MIC5014
  • MIC5014

MIC5014

In Production

MIC5014 and MIC5015 MOSFET gate drivers are designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5014/5 can sustain an on-state output indefinitely.The MIC5014/5 operates from a 2.75 V to 30 V supply. In high-side configurations, the driver can control MOSFETs that switch loads of up to 30 V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET.The MIC5014/5 has a TTL compatible control input. Non-inverting and inverting configurations available: MIC5014: Non-Inverting MIC5015: Inverting. The MIC5014/5 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The gate driver is capable of turning on a logic-level MOSFE...

Microchip Technology MIC5014 Product Info

16 April 2026 0

Parameters

Capacitive Load Drive

1000 pF in 90 µs

MOSFET Driver Type

High Side

Supply Voltage Max V (volt)

30

Peak Sink Current A (ampere)

0.8

Peak Source Current A (ampere)

0.8

Propagation Delay tD1 ns (nanosecond)

0

Propagation Delay tD2 ns (nanosecond)

0

Sink Resistance Ω (ohm)

0

Source Resistance Ω (ohm)

0

Fall Time tF ns (nanosecond)

6000

Rise Time tR ns (nanosecond)

90000

# of Outputs

1

Integrated MOSFETs

External

Peak High-Side Source Current (Ampere)

0.8

Peak Low-Side Source Current (Ampere)

0.8

Peak High-Side Sink Current (Ampere)

0.8

Supply Voltage Min V (volt)

2.7

Bootstrap Supply Voltage Max V (volt)

15

High-Side Rise Time (ns)

90000

Low-Side Rise Time (ns)

90000

High-Side Fall Time (ns)

6000

Low-Side Fall Time (ns)

6000

Temp Range (T-Ambient) Min °C (degrees Celsius)

-40

Temp Range (T-Ambient) Max °C (degrees Celsius)

85

Output Configuration

High-Side

Features

  • 2.75 V to 30 V operation
  • 100 µA maximum supply current (5 V supply)
  • 15 µA typical off-state current
  • Internal charge pump
  • TTL compatible input
  • Withstands 60 V transient (load dump)
  • Reverse battery protected to -20 V
  • Inductive spike protected to -20 V
  • Overvoltage shutdown at 35 V
  • Internal 15 V gate protection
  • Minimum external parts
  • Operates in high-side or low-side configurations
  • 1 µA control input pull-off
  • Inverting and noninverting versions
  • Description

    MIC5014 and MIC5015 MOSFET gate drivers are designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5014/5 can sustain an on-state output indefinitely.

    The MIC5014/5 operates from a 2.75 V to 30 V supply. In high-side configurations, the driver can control MOSFETs that switch loads of up to 30 V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET.

    The MIC5014/5 has a TTL compatible control input.

    Non-inverting and inverting configurations available:

    MIC5014: Non-Inverting

    MIC5015: Inverting.

    The MIC5014/5 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The gate driver is capable of turning on a logic-level MOSFET from a 2.75 V supply or a standard MOSFET from a 5 V supply. The gate-to-source output voltage is internally limited to approximately 15 V.

    The MIC5014/5 is protected against automotive load dump, reversed battery, and inductive load spikes of 20 V. The drivers overvoltage shutdown feature turns off the external MOSFET at approximately 35 V to protect the load against power supply excursions.

    The MIC5014 is an improved pin-for-pin compatible replacement in many MIC5011 applications. The MIC5014/5 is available in plastic 8-pin DIP and 8-pin SOIC packages.

    Subscribe to Welllinkchips !
    Your Name
    * Email
    Submit a request