0
In Production
Capacitive Load Drive |
1000 pF in 60 µs |
MOSFET Driver Type |
High Side |
Supply Voltage Max V (volt) |
32 |
Peak Sink Current A (ampere) |
0.95 |
Peak Source Current A (ampere) |
0.95 |
Propagation Delay tD1 ns (nanosecond) |
0 |
Propagation Delay tD2 ns (nanosecond) |
0 |
Sink Resistance Ω (ohm) |
0 |
Source Resistance Ω (ohm) |
0 |
Fall Time tF ns (nanosecond) |
4000 |
Rise Time tR ns (nanosecond) |
25000 |
# of Outputs |
1 |
Integrated MOSFETs |
External |
Peak High-Side Source Current (Ampere) |
0.008 |
Peak Low-Side Source Current (Ampere) |
0.008 |
Peak High-Side Sink Current (Ampere) |
0.008 |
Supply Voltage Min V (volt) |
4.75 |
High-Side Rise Time (ns) |
25 |
Low-Side Rise Time (ns) |
25 |
High-Side Fall Time (ns) |
4 |
Low-Side Fall Time (ns) |
4 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
85 |
Output Configuration |
High-Side |
The MIC5011 is the "minimum parts count" member of the MIC501X gate driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin MIC5011 is extremely easy to use, requiring only a power FET and nominal supply decoupling to implement either a high- or low-side switch.
The MIC5011 charges a 1 nF load in 60 µs typical with no external components. Faster switching is achieved by adding two 1 nF charge pump capacitors. Operation down to 4.75 V allows the MIC5011 to drive standard MOSFETs in 5 V low-side applications by boosting the gate voltage above the logic supply. In addition, multiple paralleled MOSFETs can be driven by a single MIC5011 for ultra-high current applications.
Other members of the driver family include the MIC5013 protected 8-pin driver.
For new designs, recommends the pin-compatible MIC5014 MOSFET gate driver.
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