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MCP6481
  • MCP6481
  • MCP6481

MCP6481

In Production

The Microchip’s MCP6481 operational amplifiers (op amps) has low input bias current (150 pA, typical at 125°C) and rail-to-rail input and output operation. This family is unity gain stable and has a gain bandwidth product of 4 MHz (typical). These devices operate with a single-supply voltage as low as 2.2V, while only drawing 240 µA/amplifier (typical) of quiescent current. These features make the family of op amps well suited for photodiode amplifier, pH electrode amplifier, low leakage amplifier, and battery powered signal conditioning applications, etc. The MCP6481 family is offered in SOT23 and SC70 packages. All devices are designed using an advanced CMOS process and fully specified in extended temperature range from -40°C to +125°C....

Microchip Technology MCP6481 Product Info

16 April 2026 0

Parameters

CMRR Min (dB)

89

Enhanced EMI Protection

No

Gain Bandwidth Product kHz (kilohertz)

4000

Iq Max (uA)

400

Input Voltage Noise Density (nV/rt(Hz))

23

Iq Typical (µA)

240

Operating Voltage Max V (volt)

5.5

Operating Voltage Min V (volt)

2.2

PM (deg)

60

PSRR Min (dB)

91

# Per Package

1

Slew Rate (V/µs)

2.7

Vos Max µV (microvolt)

1500

Features

  • Low Input Bias Current
  • 150 pA (typical, TA = +125°C)
  • Low Quiescent Current
  • 240 µA/amplifier (typical)
  • Small Packages
  • Singles in SC70 and SOT23

Description

The Microchip’s MCP6481 operational amplifiers (op amps) has low input bias current (150 pA, typical at 125°C) and rail-to-rail input and output operation. This family is unity gain stable and has a gain bandwidth product of 4 MHz (typical). These devices operate with a single-supply voltage as low as 2.2V, while only drawing 240 µA/amplifier (typical) of quiescent current. These features make the family of op amps well suited for photodiode amplifier, pH electrode amplifier, low leakage amplifier, and battery powered signal conditioning applications, etc. The MCP6481 family is offered in SOT23 and SC70 packages. All devices are designed using an advanced CMOS process and fully specified in extended temperature range from -40°C to +125°C.

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