0
In Production
Capacitive Load Drive |
1800 pF in 17 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
3 |
Peak Source Current A (ampere) |
3 |
Propagation Delay tD1 ns (nanosecond) |
45 |
Propagation Delay tD2 ns (nanosecond) |
45 |
Sink Resistance Ω (ohm) |
4 |
Source Resistance Ω (ohm) |
4 |
Fall Time tF ns (nanosecond) |
17 |
Rise Time tR ns (nanosecond) |
14 |
# of Outputs |
2 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
3 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
4 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
4 |
Low-Side Rise Time (ns) |
14 |
Low-Side Fall Time (ns) |
17 |
Low-Side Turn-On Prop Delay (ns) |
45 |
Low Side Turn-off Propagation delay (ns) |
45 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Output Configuration |
Low-Side |
The MCP14E9/E10/E11 devices are a family of 3 A, dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E9/E10/E11 can charge 1,800 pF gate capacitance in under 25 ns (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.
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