0
In Production
Capacitive Load Drive |
2200 pF in 15 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
4 |
Peak Source Current A (ampere) |
4 |
Propagation Delay tD1 ns (nanosecond) |
46 |
Propagation Delay tD2 ns (nanosecond) |
50 |
Sink Resistance Ω (ohm) |
2.5 |
Source Resistance Ω (ohm) |
2.5 |
Fall Time tF ns (nanosecond) |
18 |
Rise Time tR ns (nanosecond) |
15 |
# of Outputs |
2 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
4 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
2.5 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
2.5 |
Low-Side Rise Time (ns) |
15 |
Low-Side Fall Time (ns) |
18 |
Low-Side Turn-On Prop Delay (ns) |
46 |
Low Side Turn-off Propagation delay (ns) |
50 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Qualification |
AEC-Q100 |
Output Configuration |
Low-Side |
The MCP14E3/E4/E5 devices are a family of 4 A, dual output MOSFET gate drivers with separate enable functions for each output. These MOSFET gate drivers, the MCP14E3/E4/E5 can charge 2200 pF gate capacitance in under 15 ns (typical). The inputs are TTL/CMOS compatible, with 300 mV of hysteresis between the high and low input levels, providing noise immunity while allowing the device to be driven from slow rising and falling signals. The MCP14E3 offers dual inverting outputs, the MCP14E4 offers dual non-inverting outputs, and the MCP14E5 offers complimentary outputs.
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