0
In Production
Capacitive Load Drive |
1,000 pF in 40 ns |
MOSFET Driver Type |
Low Side |
Supply Voltage Max V (volt) |
18 |
Peak Sink Current A (ampere) |
0.5 |
Peak Source Current A (ampere) |
0.5 |
Propagation Delay tD1 ns (nanosecond) |
33 |
Propagation Delay tD2 ns (nanosecond) |
24 |
Sink Resistance Ω (ohm) |
7.5 |
Source Resistance Ω (ohm) |
12.5 |
Fall Time tF ns (nanosecond) |
28 |
Rise Time tR ns (nanosecond) |
40 |
# of Outputs |
1 |
Output Type |
Inverting |
Integrated MOSFETs |
External |
Peak Low-Side Source Current (Ampere) |
0.5 |
Supply Voltage Min V (volt) |
4.5 |
Low-Side Source Resistance Typ (Ohms) Ω (ohm) |
12.5 |
Low-Side Sink Resistance Typ (Ohms) Ω (ohm) |
7.5 |
Low-Side Rise Time (ns) |
40 |
Low-Side Fall Time (ns) |
28 |
Low-Side Turn-On Prop Delay (ns) |
33 |
Low Side Turn-off Propagation delay (ns) |
24 |
Temp Range (T-Junction) Min °C (degrees Celsius) |
- |
Temp Range (T-Junction) Max °C (degrees Celsius) |
150 |
Temp Range (T-Ambient) Min °C (degrees Celsius) |
-40 |
Temp Range (T-Ambient) Max °C (degrees Celsius) |
125 |
Output Configuration |
Low-Side |
The MCP14A0051 is an inverting, 0.5 A MOSFET gate driver available in 6 lead 2 x 2 DFN and 6 lead SOT-23 packages. These high-speed MOSFET gate drivers allow controllers and MCUs to quickly charge and discharge capacitive loads. The small package sizes allow the gate driver to be positioned close to the MOSFET's physical gate connection, which minimizes gate bounce caused by the parasitic effects of PCB layout and reduces EMI. Rise time, fall time, propagation delay and cross-conduction current are all minimized. In addition, these devices feature a unique architecture with low input thresholds, ideally suited for use with a low-voltage MCU to minimize power losses within the system.
Non-Inverting option is also available, MCP14A0052
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