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LND150
  • LND150
  • LND150
  • LND150

LND150

In Production

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Microchip Technology LND150 Product Info

16 April 2026 0

Parameters

BVdss min (V)

500

Rds (on) max (Ohms)

1000

Vgs(off) Min V (volt)

-1.0

Vgs(off) Max V (volt)

-3.0

Package

SOT-23, TO-92, SOT-89

Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and low CISS
    • ESD gate protection

Description

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

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