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JANSR2N7593U3-MOSFET
  • JANSR2N7593U3-MOSFET

JANSR2N7593U3-MOSFET

In Production

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID) and greater,The JANSR2N7593U3 MOSFET (and non JANS MRH25N12U3SR) is designed for the following applications:•  DC–DC converters•  Motor control•  Switch mode power supplies...

Microchip Technology JANSR2N7593U3-MOSFET Product Info

16 April 2026 2

Parameters

BVdss min (V)

250

Current A (ampere)

12.4

Rds (on) max (Ohms)

0.210

Total Gate Charge (nC)

50

Vgs(th) max (V)

4.0

CISSmax (pF)

1980

Package

U3 (SMD-0.5)

SLASH Sheet

746

HiRel

Yes

RadHard

Yes

Features

  • Low RDS(on)
  • Fast switching
  • Single-event hardened
  • Low gate charge
  • Simple drive
  • Ease of paralleling
  • Hermetically sealed
  • Surface-mount design
  • Ceramic package
  • Light Weight

    • Description

    Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID) and greater,

    The JANSR2N7593U3 MOSFET (and non JANS MRH25N12U3SR) is designed for the following applications:

    •  DC–DC converters

    •  Motor control

    •  Switch mode power supplies

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