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JANSR2N7589U3-MOSFET
  • JANSR2N7589U3-MOSFET

JANSR2N7589U3-MOSFET

In Production

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID) and greater,The JANSR2N7589U3 MOSFET (and non JANS MRH15N19U3SR) is designed for the following applications:•  DC–DC converters•  Motor control•  Switch mode power supplies...

Microchip Technology JANSR2N7589U3-MOSFET Product Info

16 April 2026 2

Parameters

BVdss min (V)

150

Current A (ampere)

19

Rds (on) max (Ohms)

0.088

Total Gate Charge (nC)

50

Vgs(th) max (V)

4.0

CISSmax (pF)

2140

Package

U3 (SMD-0.5)

SLASH Sheet

746

HiRel

Yes

RadHard

Yes

Features

    Low RDS(on)
    Fast switching
    Single-event hardened
    Low gate charge
    Simple drive
    Ease of paralleling
    Hermetically sealed
    Surface-mount design
    Ceramic package
    ESD rating: Class 3B MIL-STD-750, TM 1020

Description

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID) and greater,

The JANSR2N7589U3 MOSFET (and non JANS MRH15N19U3SR) is designed for the following applications:

•  DC–DC converters

•  Motor control

•  Switch mode power supplies

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