0
In Production
BVdss min (V) |
100 |
Current A (ampere) |
22 |
Rds (on) max (Ohms) |
0.042 |
Total Gate Charge (nC) |
50 |
Vgs(th) max (V) |
4.0 |
CISSmax (pF) |
2165 |
Package |
U3 (SMD-0.5) |
SLASH Sheet |
746 |
HiRel |
Yes |
RadHard |
Yes |
Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID) and greater,
The JANSR2N7587U3 MOSFET (and non JANS MRH10N22U3SR) is designed for the following applications:
• DC–DC converters
• Motor control
• Switch mode power supplies
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