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JANSE2N2919L-Transistor
  • JANSE2N2919L-Transistor

JANSE2N2919L-Transistor

In Production

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized two 2N2484 transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R”, “F”, “G” and “H”) are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels. The device package for the encapsulated device type are as follows: similar to TO-78 and surface mount version....

Microchip Technology JANSE2N2919L-Transistor Product Info

16 April 2026 0

Parameters

Application

Low Power

Line

NPN Dual Matched

Slash Sheet

355

Screening Level

JANSE

Description

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized two 2N2484 transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R”, “F”, “G” and “H”) are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels. The device package for the encapsulated device type are as follows: similar to TO-78 and surface mount version. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/355.

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