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JANSD2N3637L-Transistor
  • JANSD2N3637L-Transistor

JANSD2N3637L-Transistor

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This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).

Microchip Technology JANSD2N3637L-Transistor Product Info

16 April 2026 0

Features

  • The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount.
  • The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.

    • Description

    This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).

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