0
In Production
Battery Backup |
No |
Density |
1 Mbit |
Endurance |
100,000 |
Max. Clock Freq. |
0 |
Operating Voltage Max (V) |
3.6 |
Operating Voltage Min (V) |
3 |
Page Size (Bytes) |
0 |
Write Protected |
No |
Data Retention |
10 |
Read Access Speed |
200/250ns |
High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
