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48LM01
  • 48LM01

48LM01

Not Recommended for new designs

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.This product is no longer available. Please see EOL PCN# CAAN-21DKPT068...

Microchip Technology 48LM01 Product Info

16 April 2026 0

Parameters

Density

1 Mb

Operating Voltage Min (V)

2.7

Operating Voltage Max (V)

3.6

Max. Clock Freq.

66 MHz

Page Size (Bytes)

1

Write Protected

Yes

Write Protect Scheme

Software Configurable

Endurance

100000

Data Retention

100

Bus Modes

SPI

Battery Backup

No

Features

  • 131,072 x 8 bit Serial SRAM with internal nonvolatile data backup
  • High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 µA (maximum); Hibernate current: 3 µA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIJ (208mil wide) package

Description

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

This product is no longer available. Please see EOL PCN# CAAN-21DKPT068

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