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2N2905AP-Transistor-PIND
  • 2N2905AP-Transistor-PIND

2N2905AP-Transistor-PIND

In Production

This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types....

Microchip Technology 2N2905AP-Transistor-PIND Product Info

16 April 2026 0

Description

This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types.

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