Samsung Semiconductor is a global leader in memory solutions, offering a complete lineup of DRAM, NAND Flash, embedded storage, solid-state drives (SSD), and special-purpose memory for AI, data center, mobile, automotive, consumer, and industrial applications. This document introduces key product series, core features, typical applications, and performance comparisons, covering HBM, DDR/LPDDR/GDDR, UFS/eMMC, consumer/enterprise SSD, automotive-grade memory, and eMRAM.

1.1 DRAM Series

High-Bandwidth Memory (HBM)

HBM3E: 12-high stacking, up to 36GB; bandwidth up to 1.2TB/s; pin speed up to 9.6Gbps

HBM4: Mass-produced in 2026; 11.7Gbps baseline (up to 13Gbps); bandwidth up to 3.3TB/s;

12/16-layer stacking; 24GB–48GB

Features: 3D stacking, ultra-high bandwidth, low power, near-processor integration

Applications: AI accelerators, HPC, GPU, data center training/inference

Standard DDR (DDR4/DDR5)

DDR5: 4800–6400Mbps; 16Gb–32Gb; ECC/RDIMM/LRDIMM up to 256GB

DDR4: 2133–3200Mbps; mainstream server/desktop compatibility

Features: high density, stability, ECC support, server-grade reliability

Applications: servers, workstations, desktops, cloud computing

Low-Power DRAM (LPDDR4X/LPDDR5/LPDDR5X)

LPDDR5X: up to 8533Mbps; 16Gb–128Gb; ultra-low power

LPDDR5: 6400Mbps; optimized for mobile/edge

Features: low voltage, long battery life, compact package

Applications: smartphones, tablets, notebooks, edge AI, portable devices

Graphics DRAM (GDDR6/GDDR7)

GDDR7: 24Gb; up to 42.5Gbps; for high-end graphics/compute

GDDR6: 12.0Gbps; mainstream gaming/AR/VR

Features: extreme bandwidth, parallel processing, gaming optimization

Applications: GPU, game consoles, AR/VR, autonomous driving domain control

1.2 NAND Flash & Embedded Storage

UFS (Universal Flash Storage)

UFS 4.1 4-Lane: sequential read up to 9200MB/s; low latency

UFS 3.1/3.0/2.0: mainstream mobile/automotive

Features: high speed, low power, differential signaling, multi-lane

Applications: flagship mobile, automotive infotainment, industrial terminals

eMMC

eMMC 5.1: up to 330MB/s read; 8GB–128GB

Features: cost-effective, easy integration, mature ecosystem

Applications: entry mobile, IoT, tablets, industrial control

eMCP / uMCP

Combo: DRAM + NAND in one package

Features: miniaturization, simplified PCB, BOM optimization

Applications: wearables, feature phones, IoT sensors

1.3 Solid-State Drives (SSD)

Consumer SSD

990 EVO Plus, 980 Pro, 970 EVO: PCIe 4.0/3.0; M.2 2280; high performance

Features: TurboWrite, thermal control, endurance optimization

Applications: gaming PCs, ultrabooks, workstations

Enterprise/Data Center SSD

PM1743, PM9A3, PM981: PCIe 5.0/4.0; high IOPS, low latency, 24×7 reliability

Features: NVMe over Fabrics, power-loss protection, ECC, secure erase

Applications: cloud storage, database, big data, AI infrastructure

Automotive SSD (AutoSSD)

-40℃–105℃; AEC-Q100; 128GB–2TB

Applications: ADAS, IVI, black box, in-vehicle computing

1.4 Special-Purpose Memory

eMRAM (Embedded MRAM)

Non-volatile, fast read/write, high-temperature endurance, CMOS-compatible

Applications: automotive MCU, IoT, industrial controllers, smart sensors

Advanced Process: 1β/1α DRAM; 294-layer V-NAND; 4nm logic for HBM

3D Stacking: HBM TSV, V-NAND vertical array, high density

Low Power & High Efficiency: LPDDR/XMP/Dynamic Voltage scaling

Reliability: ECC, power-loss protection, automotive-grade qualification

Eco-System: CXL, NVMe, UFS 4.1, automotive/industrial compliance

Samsung’s memory portfolio covers volatile and non-volatile, embedded and removable, consumer and enterprise, general and automotive/industrial segments. Supported by HBM4, DDR5, LPDDR5X, UFS 4.1, and enterprise PCIe 5.0 SSD, it leads AI, data center, mobile, and intelligent automotive trends with high performance, low power, high density, and long-term reliability.