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S80KS2564GACHI043
  • S80KS2564GACHI043

S80KS2564GACHI043

Active and preferred

S80KS2564GACHI043 is a 256 Mb HYPERRAM™ self-refresh DRAM (PSRAM) with a 1.8 V HYPERBUS™ extended-IO x16 DDR interface. It supports up to 200 MHz clock and up to 800 MBps throughput, with 35 ns maximum access time. Burst read/write current is 20 mA/22 mA at 200 MHz, standby current is 1.55 µA, and it supports Hybrid Sleep and Deep Power Down. It operates from 1.7 V to 2.0 V across -40°C to +85°C in a 49-ball FBGA.

Infineon Technologies S80KS2564GACHI043 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

KS-4

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS x16

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Technology

HYPERRAM

Features

  • HYPERBUS extended-IO x16 bus
  • DDR transfers both clock edges
  • 200 MHz maximum clock rate
  • Up to 800 MBps data throughput
  • Maximum access time tACC 35 ns
  • Optional differential clock CK/CK#
  • RWDS strobe and write data mask
  • Configurable linear or wrapped burst
  • 1.7 V to 2.0 V VCC/VCCQ supply
  • Hybrid sleep retains memory data
  • Deep power down stops refresh
  • ESD: 2 kV HBM, 500 V CDM

Description

  • x16 DDR boosts bandwidth per pin
  • 800 MBps enables fast frame buffer
  • 35 ns tACC cuts read latency
  • Diff clock improves noise margin
  • RWDS eases timing and data mask
  • Burst modes optimize host traffic
  • 1.8 V supply fits modern MCUs
  • Hybrid sleep saves power, keeps data
  • DPD minimizes energy when unused
  • ESD ratings improve handling yield
  • Overshoot spec eases SI margins
  • Active clock stop reduces ICC level

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