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S79FL01GSDSBHVC10
  • S79FL01GSDSBHVC10

S79FL01GSDSBHVC10

Active and preferred

The S79FL01GSDSBHVC10 is a 1 Gb (128 MB) Dual-Quad FL-S Flash memory with MIRRORBIT™ technology and Eclipse architecture for fast program and erase. Supporting SPI multi-I/O, Quad and DDR modes, it achieves up to 160 MB/s read and 3 MB/s programming. With a 24-ball BGA package, 2.7 V to 3.6 V supply, and AEC-Q100 automotive grade options, it offers 100,000 program-erase cycles and 20-year data retention. Ideal for code shadowing, XIP, and embedded storage.

Infineon Technologies S79FL01GSDSBHVC10 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FL-S

Interface Bandwidth

160 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Dual-Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Features

  • 1 Gb (128 MB) density
  • Dual-Quad SPI interface
  • 104 MHz Quad Read, 160 MB/s DDR Quad Read
  • 1024-byte page programming buffer
  • Internal ECC with single bit error correction
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 2048-byte one-time programmable (OTP) array
  • Block and advanced sector protection
  • 2.7 V to 3.6 V core supply voltage
  • Industrial temperature range (–40°C to +85°C)
  • Input signal overshoot tolerance to VCC+2.0

Description

  • High density enables large code/data storage
  • Dual-Quad SPI boosts data throughput
  • 160 MB/s DDR read accelerates system boot
  • Large buffer speeds up programming
  • ECC improves data reliability
  • High endurance reduces maintenance
  • Long retention ensures data integrity
  • OTP supports secure device authentication
  • Flexible protection enhances data security
  • Wide voltage range eases power design
  • Industrial temp range suits harsh settings
  • Overshoot tolerance improves signal

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