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S70KS1282GABHM020
  • S70KS1282GABHM020

S70KS1282GABHM020

Active and preferred

The S70KS1282GABHM020 is a 128-Mbit HyperRAM self-refresh DRAM with a HyperBus interface, 8-bit DDR DQ bus, RWDS strobe, and RESET#. It supports up to 200 MHz clock for up to 400 MBps (3,200 Mbps) throughput with configurable linear or wrapped bursts (16 to 128 bytes). It operates from 1.7 V to 2.0 V or 2.7 V to 3.6 V across -40°C to +125°C (AEC-Q100 Grade 1) in a 24-ball FBGA package.

Infineon Technologies S70KS1282GABHM020 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Features

  • HyperBus interface
  • 8-bit DQ[7:0] data bus
  • DDR transfers both clock edges
  • 200 MHz maximum clock rate
  • Up to 400 MBps throughput
  • Optional differential CK/CK#
  • RWDS strobe and write data mask
  • Optional DCARS phase-shifted RWDS
  • Configurable burst: linear/wrapped
  • Wrapped bursts: 16/32/64/128 B
  • Hybrid Sleep mode
  • Deep power down mode

Description

  • HyperBus cuts pin count vs parallel
  • 8-bit bus simplifies PCB routing
  • DDR boosts bandwidth per clock
  • 200 MHz supports fast memory access
  • 400 MBps feeds high-data apps
  • Diff clock improves signal integrity
  • RWDS eases timing and byte writes
  • DCARS widens read data eye margin
  • Burst options fit access patterns
  • Wrapped bursts reduce boundary hits
  • Sleep mode reduces idle power
  • Deep power down lowers system power

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