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S70GL02GT12FHBV23
  • S70GL02GT12FHBV23

S70GL02GT12FHBV23

Active and preferred

The S70GL02GT12FHBV23 is a 2 Gb (256 MB) parallel NOR flash memory using 45 nm MIRRORBIT™ technology in a 64-ball BGA package. It operates at 3.0 V core supply, supports I/O voltages from 1.65 V to VCC, and delivers 120 ns random and 30 ns page access times. Features include a 512-byte programming buffer, uniform 128 KB sectors, and up to 100,000 program-erase cycles. Qualified to AEC-Q100 Grade 2, it is ideal for automotive and industrial applications from –40°C to +105°C.

Infineon Technologies S70GL02GT12FHBV23 Product Info

16 April 2026 0

Parameters

Density

2 GBit

Family

GL-T

Initial Access Time

120 ns

Interface Frequency (SDR/DDR) (MHz)

-

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • 45 nm MIRRORBIT™ process technology
  • Parallel 3.0 V core with versatile I/O
  • ×8 and ×16 data bus support
  • 16-word/32-byte page read buffer
  • 512-byte programming buffer
  • Uniform 128-KB sectors, 2048 sectors
  • Suspend/Resume for program/erase
  • Advanced sector protection (ASP)
  • WP# input for last sector protection
  • 20 ns page access, 110 ns random access
  • 100,000 program-erase cycles per sector
  • 20-year data retention at 1K cycles

Description

  • High density for embedded applications
  • Fast programming boosts system speed
  • Flexible I/O for broad compatibility
  • Efficient block management with large sectors
  • Reliable data with advanced protection
  • Easy status monitoring simplifies design
  • Long endurance reduces maintenance
  • Low power modes extend battery life
  • Quick access improves performance
  • Secure last sector for critical code
  • Consistent performance over temperature
  • Long data retention ensures reliability

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