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S70FS01GSDSBHI213
  • S70FS01GSDSBHI213

S70FS01GSDSBHI213

Active and preferred

The S70FS01GSDSBHI213 is a 1 Gb (128 MB) dual-die SPI NOR Flash memory with 1.8 V supply, built on 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports Single, Dual, Quad, and DDR SPI modes, achieving up to 80 MBps read rates and 512-byte page programming. Hybrid and uniform sector options, advanced sector protection, and OTP enhance data integrity.

Infineon Technologies S70FS01GSDSBHI213 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FS-S

Interface Bandwidth

80 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • SPI with multi-I/O support
  • DDR and QPI modes
  • Extended 24- or 32-bit addressing
  • Compatible command set with S25FL families
  • Fast read: up to 80 MBps (DDR Quad I/O)
  • Page programming buffer: 256 or 512 bytes
  • Program and erase suspend/resume
  • Internal ECC with single bit correction
  • Hybrid or uniform sector options
  • 100,000 program-erase cycles per sector
  • 20 year data retention (10K cycles)
  • Deep power down mode (0.006 mA)

Description

  • Flexible interface for system integration
  • High-speed data access up to 80 MBps
  • Large address support for big applications
  • Easy migration from S25FL SPI products
  • Efficient page program for faster writes
  • Suspend/resume enables real-time operation
  • ECC improves data reliability
  • Sector options fit various designs
  • Long endurance for frequent updates
  • Data retention ensures long-term storage
  • Ultra-low standby saves power
  • Secure OTP and advanced protection

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