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S70FL01GSDPBHVC10
  • S70FL01GSDPBHVC10

S70FL01GSDPBHVC10

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The S70FL01GSDPBHVC10 is a 1 Gbit stacked SPI Flash memory using Infineon's 65 nm MirrorBit® technology. It operates at 3.0 V, supports SPI Multi-I/O with DDR and Quad modes, uniform 256-kbyte sectors, 100,000 program-erase cycles minimum, and 20-year data retention. With extended temperature range (-40°C to +105°C, AEC-Q100 Grade 2) and automotive-qualified BGA packaging, it integrates OTP and advanced sector protection. Suitable for automotive, industrial, and embedded.

Infineon Technologies S70FL01GSDPBHVC10 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FL-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • Dual-die stack architecture
  • SPI Multi-I/O interface
  • Supports normal, fast, dual, quad, DDR reads
  • 32-bit extended addressing
  • 512-byte page programming buffer
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • One Time Program (OTP) 2048 bytes
  • Block and advanced sector protection
  • Core voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to 3.6 V
  • SCK up to 133 MHz (single), 104 MHz (quad)

Description

  • High capacity in compact footprint
  • Flexible interface for system integration
  • Fast data access for demanding apps
  • Large address space for big data
  • Efficient page programming boosts speed
  • Reliable for frequent program/erase cycles
  • Long-term data retention for safety
  • Secure OTP for code/data storage
  • Robust protection against accidental writes
  • Operates in standard 3 V systems
  • Compatible with various I/O voltages
  • High-speed operation for fast throughput

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