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S29PL127J65BFW040
  • S29PL127J65BFW040

S29PL127J65BFW040

The S29PL127J65BFW040 is a 128 Mbit, 3 V-only Flash memory device with Enhanced VersatileIO™, supporting page mode and simultaneous read/write operations. Four banks enable zero-latency switching between program/erase and read functions. It operates from a single 2.7–3.6 V supply, with VIO options at 1.65–1.95 V or 2.7–3.6 V. Standby current is 0.2 μA. Built on 110 nm technology, it offers 20-year data retention and 1 million cycles per sector endurance.

Infineon Technologies S29PL127J65BFW040 Product Info

16 April 2026 1

Parameters

Density

128 MBit

Family

PL-J

Initial Access Time

65 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-25 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Qualification

Wireless

Features

  • Enhanced VersatileIO™ for flexible I/O
  • Simultaneous read/write with zero latency
  • 8-word page mode for fast page access
  • Random access time as fast as 55 ns
  • Page access time as fast as 20 ns
  • Single power supply: 2.7–3.6 V for all ops
  • Typical standby current: 0.2 μA
  • FlexBank: 4 banks, 2 ops per device
  • CFI (Common Flash Interface) compliant
  • JEDEC 42.4 command-set compatible
  • Erase/Program suspend and resume
  • Multiple sector protection: persistent,

Description

  • Flexible I/O simplifies system integration
  • Zero latency boosts system performance
  • Fast page access accelerates data reads
  • Quick random/page access reduces wait time
  • Single supply eases power design
  • Ultra-low standby current saves energy
  • Dual-bank ops enable parallel tasks
  • CFI/JEDEC ensures easy software integration
  • Suspend/resume improves system responsiveness
  • Robust sector protection enhances data safety
  • High endurance lowers maintenance needs
  • Long retention secures data for years

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