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S29GL512S10TFA020
  • S29GL512S10TFA020

S29GL512S10TFA020

Active and preferred

The S29GL512S10TFA020 is a 512 Mb (64 MB) parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, featuring a 16-bit data bus and single 2.7 V to 3.6 V supply with versatile I/O down to 1.65 V. It offers 100 ns random access, 15 ns page access, and a 512-byte programming buffer. With 100,000 program/erase cycles, 20-year data retention, advanced sector protection, and AEC-Q100 qualification, it is ideal for demanding embedded and automotive applications.

Infineon Technologies S29GL512S10TFA020 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

GL-S

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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