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S29GL128S10DHI010
  • S29GL128S10DHI010

S29GL128S10DHI010

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The S29GL128S10DHI010 is a 128 Mb parallel flash memory using 65 nm MIRRORBIT™ Eclipse technology. Operating at 3.0 V with versatile I/O from 1.65 V to 3.6 V, it features a 16-bit data bus and supports asynchronous random access as fast as 90 ns and page access down to 15 ns. A 512-byte programming buffer, 128 kbyte sector erase, and internal ECC enable fast programming and robust data integrity. Designed for embedded, automotive, and industrial systems.

Infineon Technologies S29GL128S10DHI010 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

GL-S

Initial Access Time

100 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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