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S29GL064S90TFVV20
  • S29GL064S90TFVV20

S29GL064S90TFVV20

Active and preferred

The S29GL064S90TFVV20 is a 64 Mb parallel NOR flash memory using MIRRORBIT™ technology. It operates from a single 3.0 V supply and supports versatile I/O (VIO from 1.65 V to VCC) with 70 ns access time. Endurance is rated at 100,000 erase cycles per sector and typical data retention is 20 years. Advanced sector protection, hardware reset, and secure silicon region enhance reliability and security.

Infineon Technologies S29GL064S90TFVV20 Product Info

16 April 2026 1

Parameters

Density

64 MBit

Family

GL-S

Initial Access Time

90 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 3.0 V single power supply operation
  • 65-nm MIRRORBIT™ process technology
  • 16-bit or 8/16-bit data bus options
  • 70 ns access time, 15 ns page read time
  • 8-word/16-byte page read buffer
  • 128-word/256-byte write buffer
  • Internal hardware ECC, single bit correction
  • Advanced sector protection
  • 100,000 erase cycles per sector min
  • 20-year data retention typical
  • Automatic sleep and standby modes
  • JEDEC CFI and command set compatible

Description

  • 3.0 V simplifies power design
  • 65-nm tech ensures high reliability
  • Flexible bus supports legacy and new designs
  • Fast access boosts system performance
  • Page buffer enables quick data reads
  • Write buffer speeds up programming
  • ECC improves data integrity
  • Multi-level protection enhances security
  • High endurance lowers maintenance cost
  • Long retention secures critical data
  • Low-power modes extend battery life
  • JEDEC compatibility eases integration

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