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S29GL064S70BHI040
  • S29GL064S70BHI040

S29GL064S70BHI040

Active and preferred

The S29GL064S70BHI040 is a 64 Mb (8 MB) parallel NOR flash memory using MIRRORBIT™ technology. It offers 70 ns access time, operates from a single 2.7 V to 3.6 V supply, and supports I/O voltages from 1.65 V to VCC. Features include sector protection, hardware ECC, and a secure silicon region. Available in fine-pitch BGA, it meets AEC-Q100 Grade 2 requirements and supports 100,000 erase cycles per sector. Applications include automotive ECUs and industrial controllers.

Infineon Technologies S29GL064S70BHI040 Product Info

16 April 2026 2

Parameters

Density

64 MBit

Family

GL-S

Initial Access Time

70 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 3.0 V single power supply operation
  • 65-nm MIRRORBIT™ process technology
  • 16-bit or 8/16-bit data bus options
  • 70 ns access time, 15 ns page read time
  • 8-word/16-byte page read buffer
  • 128-word/256-byte write buffer
  • Internal hardware ECC, single bit correction
  • Advanced sector protection
  • 100,000 erase cycles per sector min
  • 20-year data retention typical
  • Automatic sleep and standby modes
  • JEDEC CFI and command set compatible

Description

  • 3.0 V simplifies power design
  • 65-nm tech ensures high reliability
  • Flexible bus supports legacy and new designs
  • Fast access boosts system performance
  • Page buffer enables quick data reads
  • Write buffer speeds up programming
  • ECC improves data integrity
  • Multi-level protection enhances security
  • High endurance lowers maintenance cost
  • Long retention secures critical data
  • Low-power modes extend battery life
  • JEDEC compatibility eases integration

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