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S29GL064N90TFI040
  • S29GL064N90TFI040

S29GL064N90TFI040

The S29GL064N90TFI040 is a 64 Mbit (8 MB) 3 V page-mode NOR Flash memory based on 110 nm MirrorBit technology, featuring a 16-bit or 8-bit data bus and 90 ns access time. It operates from a single 2.7–3.6 V supply, supports VIO from 1.65–3.6 V, and the industrial temperature range (–40°C to +85°C).

Infineon Technologies S29GL064N90TFI040 Product Info

16 April 2026 1

Parameters

Density

64 MBit

Family

GL-N

Initial Access Time

90 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

25 ns

Peak Reflow Temp

260 °C

Features

  • 3 V single power supply operation
  • 16-bit data bus, byte/word selectable
  • 8-word/16-byte page read buffer
  • 16-word/32-byte write buffer
  • Unlock Bypass mode for fast programming
  • Accelerated program via WP#/ACC pin
  • Advanced sector protection:
  • Secured Silicon Sector for code/data
  • 100,000 erase cycles per sector
  • 20-year data retention
  • Low power: 1 µA standby, 1 mA page read
  • JEDEC and CFI command set compatible

Description

  • Simplifies power design with single 3 V
  • Flexible interface for 8/16-bit systems
  • Fast random access with page read buffer
  • Quick multi-word updates reduce downtime
  • Faster programming boosts throughput
  • High security for code/data storage
  • Multiple protection modes prevent data loss
  • Reliable with high endurance and retention
  • Low power extends battery/system life
  • Easy integration with JEDEC, CFI standards

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