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S27KS0642GABHM023
  • S27KS0642GABHM023

S27KS0642GABHM023

Active and preferred

The S27KS0642GABHM023 is a 64 Mb HyperRAM self-refresh DRAM with HyperBus interface and 8-bit DDR data bus for external memory expansion. It supports 200 MHz clock and up to 400 MBps throughput with linear or wrapped bursts (16/32/64/128 B), plus optional DCARS. Automotive AEC-Q100 Grade 1 (-40 to 125°C). 1.8 V-only VCC/VCCQ (1.7 to 2.0 V), 24-ball FBGA (6 x 8 x 1.0 mm), tape-and-reel.

Infineon Technologies S27KS0642GABHM023 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Features

  • HyperBus Interface
  • 8-bit DDR data bus (DQ[7:0])
  • 200 MHz maximum clock rate
  • Up to 400 MBps throughput
  • 35 ns max initial access (tACC)
  • RWDS read strobe/write mask
  • Optional differential CK/CK#
  • Optional DCARS strobe phase shift
  • Linear or wrapped burst lengths
  • Active Clock Stop state
  • Hybrid Sleep retains data
  • Deep Power Down stops refresh

Description

  • Reduces pins vs parallel DRAM
  • High bandwidth for fast loads
  • 35 ns helps cut read latency
  • RWDS improves DDR timing margin
  • Diff clock helps SI and noise
  • DCARS improves read eye margin
  • Burst modes match system access
  • Clock stop lowers stall power
  • Hybrid Sleep saves power, keeps data
  • DPD minimizes power when unused
  • Works with 1.8 V or 3.0 V rails
  • 2 kV HBM ESD improves durability

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