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S27KS0642GABHI020
  • S27KS0642GABHI020

S27KS0642GABHI020

Active and preferred

The S27KS0642GABHI020 is a 64 Mb HYPERRAM™ self-refresh DRAM (PSRAM) with a HYPERBUS™ DDR interface (8-bit DQ, RWDS, CS#, RESET#) for high-bandwidth scratchpad memory. It supports 1.8 V VCC/VCCQ (1.7–2.0 V), up to 200 MHz clock and 400 MBps transfers, with 35 ns max access time. Linear or wrapped bursts (16–128 B) plus hybrid bursts, HS and deep power-down. 24-ball FBGA, -40°C to +85°C.

Infineon Technologies S27KS0642GABHI020 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

N/A

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Technology

HYPERRAM

Apps

AI and data center, Consumer Wearables, Home appliances, Industrial robots

Features

  • HYPERBUS™ interface
  • 1.8 V or 3.0 V I/O support
  • Single-ended or diff clock option
  • 8-bit DDR data bus (DQ[7:0])
  • RWDS strobe and write data mask
  • Optional DCARS read strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • Max access time (tACC) 35 ns
  • Hybrid sleep retains data
  • Deep power-down stops refresh
  • ESD: 2 kV HBM, 500 V CDM

Description

  • Fast MCU memory expansion over x8
  • Works with 1.8 V or 3.0 V rails
  • Clock options ease PCB constraints
  • DDR x8 reduces routing complexity
  • RWDS improves DDR timing margins
  • DCARS widens read data eye margin
  • 200 MHz supports high bandwidth I/O
  • 400 MBps enables fast frame buffers
  • 35 ns tACC reduces access latency
  • Hybrid sleep saves power, keeps data
  • DPD minimizes power when data not needed
  • High ESD improves handling robustness

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