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S26KS128SDPBHM023
  • S26KS128SDPBHM023

S26KS128SDPBHM023

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The S26KS128SDPBHM023 is a 128 Mb (16 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting 1.8 V and 3.0 V operation. It achieves up to 333 MBps DDR read throughput at 166 MHz, features uniform 256 KB sectors, ECC for 1-bit correction, and 20-year data retention. Qualified to AEC-Q100 Grade 1 for -40°C to +125°C, it offers low power modes and 100,000 program/erase cycles, ideal for high-speed automotive and industrial code and data storage.

Infineon Technologies S26KS128SDPBHM023 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

128 MBit

Family

KS-S

Initial Access Time

96 ns

Interface Bandwidth

333 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 166

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 1.95 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Description

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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