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S26KS128SDGBHV030
  • S26KS128SDGBHV030

S26KS128SDGBHV030

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The S26KS128SDGBHV030 is a 128 Mb (16 MB) HYPERFLASH™ NOR memory with an 8-bit DDR HYPERBUS™ interface, supporting 1.8 V and 3.0 V operation. It delivers up to 333 MBps sustained read throughput at 1.8 V (166 MHz) and 200 MBps at 3.0 V (100 MHz), with 96 ns initial random access. Features include uniform 256 KB sectors, ECC, CRC, advanced sector protection, and AEC-Q100 automotive qualification.

Infineon Technologies S26KS128SDGBHV030 Product Info

16 April 2026 2

Parameters

Bus Width

x8

Density

128 MBit

Family

KS-S

Initial Access Time

96 ns

Interface Bandwidth

266 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 133

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 1.95 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Technology

HYPERFLASH

Features

  • 8-bit data bus
  • HYPERBUS™ interface
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 166 MHz clock rate at 1.8 V
  • 100 MHz clock rate at 3.0 V
  • 96 ns initial random read access time
  • Configurable burst lengths: 16/32/64 bytes
  • Low power modes: standby 25 µA, deep
  • ECC: 1-bit correction, 2-bit detection
  • Hardware CRC calculation
  • Secure silicon region (1024-byte OTP)

Description

  • Fast data access for high-performance systems
  • Flexible interface supports diverse designs
  • High-speed DDR improves throughput
  • Multiple burst lengths optimize transfers
  • Low power modes extend battery life
  • ECC ensures data integrity
  • CRC detects transmission errors
  • Secure region enables device authentication
  • Quick random access reduces latency
  • 8-bit bus simplifies integration
  • Configurable output drive for signal tuning
  • Reliable operation in harsh environments

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