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S25FS512SDSBHB210
  • S25FS512SDSBHB210

S25FS512SDSBHB210

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The S25FS512SDSBHB210 is a 512 Mb automotive-grade SPI NOR flash memory with 65-nm MIRRORBIT™ technology and Eclipse architecture. Operating from 1.7 V to 2.0 V, it supports SPI Multi-I/O with single, dual, quad, and DDR modes up to 80 MHz. Typical uses include code shadowing, XIP, and data storage in automotive and embedded systems. The device offers robust sector protection, AEC-Q100 Grade 2 qualification for -40°C to +105°C, and a compact 24-ball BGA package.

Infineon Technologies S25FS512SDSBHB210 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

512 MBit

Family

FS-S

Interface Bandwidth

80 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • SPI with multi-I/O support
  • DDR and SDR clocking options
  • 24- or 32-bit addressing
  • Compatible with S25FL SPI families
  • Multiple read modes: Normal, Fast, Dual
  • Burst wrap and XIP support
  • 256/512-byte page programming buffer
  • Program and erase suspend/resume
  • Internal ECC with single bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles min
  • 20 year data retention min

Description

  • Flexible interface for diverse host
  • High-speed data transfer and boot performance
  • Supports large address spaces for modern
  • Easy migration from legacy SPI designs
  • Optimized for fast and efficient data access
  • Enables execute-in-place (XIP) applications
  • Efficient programming for fast updates
  • Minimized downtime during program/erase
  • Enhanced data reliability and integrity
  • Flexible memory management for varied needs
  • Long device lifetime for demanding use
  • Reliable data storage for mission-critical

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