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S25FS512SAGNFV011
  • S25FS512SAGNFV011

S25FS512SAGNFV011

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The S25FS512SAGNFV011 is a 512 Mb (64 MB) serial NOR flash memory with 65-nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It operates from 1.7 V to 2.0 V, supports SPI Multi-I/O with single, dual, and quad data lines, and achieves up to 80 MB/s DDR Quad I/O read speed. With hybrid or uniform sector options, 20-year data retention, and AEC-Q100 qualification, it is ideal for automotive and industrial code storage and embedded systems.

Infineon Technologies S25FS512SAGNFV011 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

FS-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • SPI interface with multi-I/O support
  • Supports clock modes 0 and 3
  • Double data rate (DDR) option
  • 24- or 32-bit addressing
  • Compatible command set with S25FL families
  • Multiple read modes: Normal, Fast, Dual
  • Burst wrap, continuous (XIP), QPI modes
  • 256/512-byte page programming buffer
  • Internal ECC with single bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum

Description

  • Flexible I/O enables faster data transfer
  • DDR option boosts throughput
  • Large page buffer increases programming speed
  • ECC improves data reliability
  • Multiple erase options suit varied designs
  • High endurance for long device life
  • Long data retention secures information
  • Low voltage reduces power consumption
  • Deep power-down saves energy
  • OTP array enhances system security
  • Advanced protection prevents unauthorized
  • Compatible with existing designs

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